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 ZXTP07040DFF 40V, SOT23F, PNP medium power transistor
Summary;
BVCEO > -40V BVECO > -3V IC(cont) = -3A VCE(sat) < -100mV @ 1A RCE(sat) = 67m PD = 1.5W Complementary part number ZXTN07045EFF
Description
This low voltage PNP transistor has been designed for applications requiring high gain and very low saturation voltage. The SOT23F package is pin compatible with the industry standard SOT23 footprint but offers lower profile and higher dissipation for applications where power density is of utmost importance.
C
B
Features
* * * * Low profile SOT23F package Low saturation voltage High Gain High power dissipation
E
E C B Pinout - top view
Applications
* * * * * Load switches Battery charging Siren driver MOSFET and IGBT gate driver Motor drive
Ordering information
Device ZXTP07040DFFTA Reel size (inches) 7 Tape width (mm) 8 Quantity per reel 3000
Device marking
1D2 Issue 1 - September 2006
(c) Zetex Semiconductors plc 2006
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ZXTP07040DFF
Absolute maximum ratings
Parameter Collector-base voltage Collector-emitter voltage Emitter-collector voltage (reverse blocking) Emitter-base voltage Continuous collector current(c) Peak pulse current Base current Power dissipation at Tamb =25C(a) Linear derating factor Power dissipation at Tamb Linear derating factor Power dissipation at Tamb =25C(c) Linear derating factor Power dissipation at Tamb =25C(d) Linear derating factor Operating and storage temperature range Tj, Tstg PD PD =25C(b) PD Symbol VCBO VCEO VECO VEBO IC ICM IB PD Limit -50 -40 -3 -7 -3 -6 -1 0.84 6.72 1.34 10.72 1.50 12.0 2.0 16.0 -55 to 150 Unit V V V V A A A W mW/C W mW/C W mW/C W mW/C C
Thermal resistance
Parameter Junction to ambient(a) Junction to ambient(b) Junction to ambient(c) Junction to ambient(d) Symbol R JA R JA R JA R JA Limit 149 93 83 60 Unit C/W C/W C/W C/W
NOTES: (a) For a device surface mounted on 15mm x 15mm x 1.6mm FR4 PCB with high coverage of single sided 1oz copper, in still air conditions. (b) Mounted on 25mm x 25mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (c) Mounted on 50mm x 50mm x 1.6mm FR4 PCB with a high coverage of single sided 2 oz copper in still air conditions. (d) As (c) above measured at t<5secs.
Issue 1 - September 2006
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ZXTP07040DFF
Characteristics
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ZXTP07040DFF
Electrical characteristics (at Tamb = 25C unless otherwise stated)
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage (base open) Emitter-base breakdown voltage Emitter-collector breakdown voltage (reverse blocking) Symbol BVCBO BVCEO BVEBO BVECO Min. -50 -40 -7 -3 Typ. -80 -65 -8.3 -8.6 <-1 -50 -20 Emitter-base cut-off current Collector-emitter saturation voltage IEBO VCE(sat) <-1 -110 -80 -230 -310 -250 Base-emitter saturation voltage Base-emitter turn-on voltage Static forward current transfer ratio VBE(sat) VBE(on) hFE 300 250 200 80 Transition frequency Output capacitance Delay time Rise time Storage time Fall time fT Cobo td tr ts tf 100 -935 -825 450 380 330 160 200 30 20.7 12.2 375 72
300 s; duty cycle 2%.
Max.
Unit Conditions V V V V nA A nA mV mV mV mV mV mV mV IC = -100 A IC = -10mA (*) IE = -100 A IE = -100 A VCB = -36V VCB = -36V, Tamb= 100C VEB = -5.6V IC = -0.5A, IB = -5mA(*) IC = -1A, IB = -100mA(*) IC = -1A, IB = -10mA(*) IC = -2A, IB = -40mA(*) IC = -3A, IB = -150mA(*) IC = -3A, IB = -150mA(*) IC = -3A, VCE = -2V(*) IC = -10mA, VCE = -2V(*) IC = -0.5A, VCE = -2V(*) IC = -1A, VCE = -2V(*) IC = -3A, VCE = -2V(*) MHz IC = -50mA, VCE = -5V f = 50MHz
Collector-base cut-off current ICBO
-50 -180 -100 -400 -540 -390 -1040 -930 800
40
pF ns ns ns ns
VCB = -10V, f = 1MHz(*) VCC = -10V, IC = -500mA, IB1 = IB2= -50mA
NOTES: (*) Measured under pulsed conditions. Pulse width
Issue 1 - September 2006
(c) Zetex Semiconductors plc 2006
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ZXTP07040DFF
Typical characteristics
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ZXTP07040DFF
Package outline - SOT23F
D b b L1 L c e1 e
E1
E
E2
b R A
A1
Dim. A A1 b c D e e1
Millimeters Min. 0.80 0.00 0.35 0.10 2.80 1.80 Max. 1.00 0.10 0.45 0.20 3.00 2.00
Inches Min. 0.0315 0.00 0.0153 0.0043 0.1102 0.0709 Max. 0.0394 0.0043 0.0161 0.0079 0.1181 0.0787
Dim. E E1 E2 L L1 R O
Millimeters Min. 2.30 1.50 1.10 0.48 0.30 0.05 0 Max. 2.50 1.70 1.26 0.68 0.50 0.15 12
Inches Max. 0.0906 0.0590 0.0433 0.0189 0.0153 0.0019 0 Max. 0.0984 0.0669 0.0496 0.0268 0.0161 0.0059 12
0.95 ref
0.0374 ref
Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
Europe Zetex GmbH Kustermann-park Balanstrae 59 D-81541 Munchen Germany Telefon: (49) 89 45 49 49 0 Fax: (49) 89 45 49 49 49 europe.sales@zetex.com
Americas Zetex Inc 700 Veterans Memorial Highway Hauppauge, NY 11788 USA Telephone: (1) 631 360 2222 Fax: (1) 631 360 8222 usa.sales@zetex.com
Asia Pacific Zetex (Asia Ltd) 3701-04 Metroplaza Tower 1 Hing Fong Road, Kwai Fong Hong Kong Telephone: (852) 26100 611 Fax: (852) 24250 494 asia.sales@zetex.com
Corporate Headquarters Zetex Semiconductors plc Zetex Technology Park, Chadderton Oldham, OL9 9LL United Kingdom Telephone: (44) 161 622 4444 Fax: (44) 161 622 4446 hq@zetex.com
For international sales offices visit www.zetex.com/offices Zetex products are distributed worldwide. For details, see www.zetex.com/salesnetwork This publication is issued to provide outline information only which (unless agreed by the company in writing) may not be used, applied or reproduced for any purpose or form part of any order or contact or be regarded as a representation relating to the products or services concerned. The company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or service.
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